原子层沉积
纳米技术
限制
材料科学
沉积(地质)
图层(电子)
工程物理
工程类
机械工程
沉积物
生物
古生物学
作者
Richard W. Johnson,Adam Hultqvist,Stacey F. Bent
出处
期刊:Materials Today
[Elsevier BV]
日期:2014-05-10
卷期号:17 (5): 236-246
被引量:1656
标识
DOI:10.1016/j.mattod.2014.04.026
摘要
Atomic layer deposition (ALD) is a vapor phase technique capable of producing thin films of a variety of materials. Based on sequential, self-limiting reactions, ALD offers exceptional conformality on high-aspect ratio structures, thickness control at the Angstrom level, and tunable film composition. With these advantages, ALD has emerged as a powerful tool for many industrial and research applications. In this review, we provide a brief introduction to ALD and highlight select applications, including Cu(In,Ga)Se2 solar cell devices, high-k transistors, and solid oxide fuel cells. These examples are chosen to illustrate the variety of technologies that are impacted by ALD, the range of materials that ALD can deposit – from metal oxides such as Zn1−xSnxOy, ZrO2, Y2O3, to noble metals such as Pt – and the way in which the unique features of ALD can enable new levels of performance and deeper fundamental understanding to be achieved.
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