碳化硅
MOSFET
功率MOSFET
电子工程
材料科学
逻辑门
功率(物理)
电气工程
计算机科学
工程类
电压
晶体管
物理
量子力学
冶金
作者
Helong Li,Stig Munk‐Nielsen,Cam Pham,Szymon Bęczkowski
标识
DOI:10.1109/epe.2014.6910835
摘要
This paper focuses on circuit mismatch influence on performance of paralleling SiC MOSFETs. Power circuit mismatch and gate driver mismatch influences are analyzed in detail. Simulation and experiment results show the influence of circuit mismatch and verify the analysis. This paper aims to give suggestions on paralleling discrete SiC MOSFETs and designing layout of power modules with paralleled SiC MOSFETs dies.
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