单层
材料科学
化学气相沉积
选择性
纳米技术
氮化硼
六方氮化硼
化学工程
可扩展性
氢
二硫化钼
硼
膜
沉积(地质)
石墨烯
氮化物
基质(水族馆)
纳米网
作者
Pavan Chaturvedi,Andrew E. Naclerio,Saban M. Hus,Ivan Vlassiouk,Nickolay V. Lavrik,Martí Checa,Liam Collins,An‐Ping Li,Piran R. Kidambi
标识
DOI:10.1002/adma.202511868
摘要
Atomically thin two-dimensional (2D) ceramics, such as monolayer hexagonal boron nitride (h-BN), present potential for disruptive advances in separations. However, sub-atomic scale separation of hydrogen isotopes (H+/D+) require near pristine 2D material membranes, and scalable synthesis of such high-quality h-BN comparable to mechanically exfoliated crystals remains a significant challenge. Here, we report a scalable Fe-catalyzed chemical vapor deposition (CVD) process for bottom-up synthesis of large-area, high-quality monolayer h-BN films, overcoming key limitations of conventional ammonia-based routes. By leveraging mechanistic insights and higher CVD temperatures, we suppress multilayer formation and achieve uniform monolayer h-BN coverage on commercially available Fe foils. Machine learning enables systematic exploration of the complex, multi-dimensional CVD parameter space (growth time, temperature, precursor temperature, multilayer faction, coverage), providing data-driven approaches to visualize and identify process regimes facilitating predominantly monolayer h-BN growth with minimal secondary nuclei/ad-layers. The optimized Fe-catalyzed CVD h-BN membranes show high-quality as observed by proton/deuteron (H+/D+) selectivity ≈8.45, approaching the highest quality benchmark of mechanically exfoliated h-BN (H+/D+ selectivity ≈10) as well as significantly outperforming Cu-catalyzed CVD h-BN membranes (H+/D+ selectivity ≈3.62, control selectivity ≈1.7). Our work provides a scalable cost-effective route for high-quality monolayer h-BN synthesis for sub-atomic scale separations (H+/D+) and demonstrates the broader potential of machine learning-guided optimization of CVD for advancing synthesis of 2D materials.
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