Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP2S6 via In-Plane Ionic Migration

As basic building blocks for next-generation information technologies devices, high-quality p-n junctions based on van der Waals (vdW) materials have attracted widespread interest.Compared to traditional two dimensional (2D) heterojunction diodes, the emerging homojunctions are more attractive owing to their intrinsic advantages, such as continuous band alignments and smaller carrier trapping. Here, utilizing the long-range migration of Cu + ions under in-plane electric field, a novel lateral p-n homojunction was constructed in the 2D layered copper indium thiophosphate (CIPS). The symmetric Au/CIPS/Au devices demonstrate an electric-field-driven resistance switching (RS) accompanying by a rectification behavior without any gate control. Moreover, such rectification behavior can be continuously modulated by poling voltage. We deduce that the reversable rectifying RS behavior is governed by the effective lateral build-in potential and the change of the interfacial barrier during the poling process. Furthermore, the CIPS p-n homojuction is evidenced by the photovoltaic effect, with the spectral response extending up to visible region due to the better photogenerated carrier separation efficiency. Our study provides a facile route to fabricate homojuctions through electric-field-driven ionic migration and paves the way towards the use of this method in other vdW materials.