High performance Cu sintering joint for power devices enabled by in-situ generation of Cu particles with multi-level hierarchical structures

Copper (Cu) particle sintering is widely regarded as one of the most ideal interconnect technologies for wide band gap semiconductors owing to its potential for low-temperature curing while withstanding a higher working temperature. Nevertheless, the strict requirements for sintering conditions and high costs limit the widespread application of Cu sintering technology. In this paper, a simple vehicle was introduced into Cu paste formulation to achieve an effective sinter bonding even using commercially available sub-micron or even micrometer Cu particles (C-Cu particles) with the in-situ generation of composite Cu particles. This innovative vehicle comprises Cu salt, a combination of capping agents and reducing agents. The addition of the hybrid capping agent binds Cu atoms to the surface of the C-Cu particles and allows the generated Cu particles (G-Cu particles) produced from the vehicle to grow on their surface, resulting in the in-situ generation of composite Cu particles. Based on the in-situ generated composite Cu particles, sintering experiments were conducted at designated temperatures (200 °C, 225 °C, 250 °C) for various durations (3 min, 5 min, 10 min) in a N2 atmosphere under different pressures (10 MPa, 15 MPa, 20 MPa). A reliable Cu sintered joint with a high shear strength of 41.3 MPa can be achieved at a low temperature (200 °C) using 500 nm C-Cu particles. Moreover, the joints sintered with large size (>3 μm) particles at 250 °C could also reach 43.3 MPa. The in-situ generated composite Cu particles accomplish the transformation of low-energy interfaces of C-Cu/C-Cu to high-energy interfaces of G-Cu/G-Cu, which in turn facilitates low-temperature sintered connection of C-Cu particles and reliable sintered joints formed of large size C-Cu particles. These findings improve the feasibility of Cu sinter bonding in practical applications.