记忆电阻器
光电子学
异质结
材料科学
纳米技术
计算机科学
电子工程
工程类
作者
Shao-Peng Su,Jia Zhou,Yexiong Huang,Wen Li,Changhai Zhu,Jie Yang,Xiaowei Zhang,Jiangshan Chen,Mingyu Pi,Mingdong Yi,Dingke Zhang
标识
DOI:10.1109/jsen.2025.3578211
摘要
Photoelectric memristors, with the advantages of low-power consumption, high scalability and high parallelism, have provided a way for broadening the application of memristors. Photoelectric memristors based on heterojunction structures have gained high-performance in simulating biological synaptic plasticity and visual synaptic bionics. However, the effective separation and migration process of photo-generated carriers and the carrier dynamics mechanism is still the key factor and urgently need development. In this study, we proposed an optoelectronic memristor based on the MEH-PPV/C60 heterostructure to simulate neural synaptic functions. Compared with the monolayer structure, the heterojunction devices exhibited an improvement in both optical and electrical performance. Various synaptic behaviors were successfully emulated under light and electric stimulation signals. The photo-luminescence (PL), time-resolved PL (TRPL) and transient absorption (TA) spectra measurements were utilized to analyze and reveal the carrier transport mechanisms of MEH-PPV/C60 heterojunction. Due to the effective electron-hole separation by the built-in electric field at the heterojunction interface, the memristor based on MEH-PPV/C60 heterojunction exhibited superior electrical and optical performance. A 3 × 4 memristor array was constructed to simulate the human visual system to perceive and remember images and an artificial visual system with fear sensing capability was presented, which achieved four key features of human visual fear receptors (threshold, no-adaptation, sensitization and relaxation). This work provides strategies for the development of future memristor structures and the construction of human-like visual systems.
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