A Novel Iridium Precursor for MOCVD

Physical properties and deposition characteristics of a newly developed liquid iridium precursor Ir(EtCp)(C2H4)2 for MOCVD were examined. TG curve showed the excellent volatility and DSC curve showed lower decomposition temperature than previous precursors. Ir-based films were deposited on SiO2/Si substrates by MOCVD using Ir(EtCp)(C2H4)2 - O2 sysytem. Ir films were successfully deposited without obvious incubation time at an initial growth stage at a deposition temperature of 250{degree sign}C. IrO2 films can be obtained directly on SiO2/Si substrate at a deposition temperature of 400{degree sign}C by controlling O2 concentration.