连续波
激光阈值
材料科学
激光器
光电子学
量子点
钙钛矿(结构)
光子学
聚丙烯腈
量子点激光器
光致发光
光学
半导体激光器理论
物理
半导体
化学
复合材料
波长
聚合物
结晶学
作者
Lei Wang,Linghai Meng,Lan Chen,Sheng Huang,Xian‐gang Wu,Guang Dai,Luogen Deng,Junbo Han,Bingsuo Zou,Chunfeng Zhang,Haizheng Zhong
标识
DOI:10.1021/acs.jpclett.9b00658
摘要
Room-temperature-operated continuous-wave lasers have been intensively pursed in the field of on-chip photonics. The realization of a continuous-wave laser strongly relies on the development of gain materials. To date, there is still a huge gap between the current gain materials and commercial requirements. In this work, we demonstrate continuous-wave lasers at room temperature using rationally designed in situ fabricated perovskite quantum dots in polyacrylonitrile films on a distributed feedback cavity. The achieved threshold values are 15, 24, and 58 W/cm2 for green, red, and blue lasers, respectively, which are one order lower than the reported values for the conventional CdSe quantum dot-based continuous-wave laser. Except for the high photoluminescence quantum yields, smooth surface, and high thermal conductivity of the resulting films, the key success of an ultralow laser threshold can be explained by the interaction of polyacrylonitrile and perovskite induced "charge spatial separation" effects. This progress opens up a door to achieve on-chip continuous-wave lasers for photonic applications.
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