异质结
带偏移量
材料科学
X射线光电子能谱
光电流
光电子学
拉曼光谱
范德瓦尔斯力
分析化学(期刊)
带隙
化学
光学
价带
物理
核磁共振
有机化学
色谱法
分子
作者
Chunhui Lu,Jingwen Ma,Keyu Si,Xiang Xu,Chenjing Quan,Chuan He
标识
DOI:10.1002/pssa.201900544
摘要
Band alignment based on mixed van der Waals heterostructures is vital to design new types of photoanodes based on transition metal dichalcogenides. Herein, different mixed ratios of WS 2 /MoS 2 photoanodes are made using a liquid‐phase exfoliation method. The WS 2 /MoS 2 photoanode is characterized by high‐resolution X‐ray photoelectron spectroscopy, which suggests type‐II heterostructure with a conduction band offset of 0.54 eV and a valence band offset of 0.55 eV. Herein, it is observed that the maximum photocurrent density at the ratio WS 2 /MoS 2 (1:1) is eight times and four times larger than pure WS 2 and MoS 2 , respectively. The amperometric I – t , Mott–Schottky, and Nyquist measurements are used to analyze the photoelectric enhancement, which suggests efficient charge separation in the photoelectrodes and low electrode–electrolyte interface resistance. Raman spectroscopy and X‐ray diffraction spectroscopy with the mode shift confirm the charge transfer and lattice change in the mixed heterostructure. The charge density difference of WS 2 /MoS 2 also confirms charge redistribution after heterostructure formation to accelerate charge transfer at the heterostructure interface efficiently. Herein, a cheap and easy way to design WS 2 /MoS 2 heterojunction‐based photoanodes for photoelectrochemical devices is explained.
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