材料科学
石墨烯
化学气相沉积
纳米技术
热分解
钽
接触电阻
石墨烯泡沫
半导体
电介质
化学工程
光电子学
石墨烯纳米带
图层(电子)
有机化学
化学
冶金
工程类
作者
Zehui Wang,Junkui Zhu,Peiru Zheng,Honglie Shen,Boxiang Gao,Jiawei Ge,Yajun Xu,Xue-Jun Yan,Ruonan Zhan,Yan Yang,Yanyan Jiang,Tianru Wu
标识
DOI:10.1021/acsami.2c02381
摘要
Vertical graphene nanowalls (VGNs) with excellent heat-transfer properties are promising to be applied in the thermal management of electronic devices. However, high growth temperature makes VGNs unable to be directly prepared on semiconductors and polymers, which limits the practical application of VGNs. In this work, the near room-temperature growth of VGNs was realized by utilizing the hot filament chemical vapor deposition method. Catalytic tantalum (Ta) filaments promote the decomposition of acetylene at ∼1600 °C. Density functional theory calculations proved that C2H* was the main active carbon cluster during VGN growth. The restricted diffusion of C2H* clusters induced the vertical growth of graphene nanoflakes on various substrates below 150 °C. The direct growth of VGNs successfully realized the excellent interfacial contact, and the thermal contact resistance could reach 3.39 × 10-9 m2·K·W-1. The temperature of electronic chips had a 6.7 °C reduction by utilizing directly prepared VGNs instead of thermal conductive tape as thermal-interface materials, indicating the great potential of VGNs to be directly prepared on electronic devices for thermal management.
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