化学机械平面化
消耗品
铜互连
材料科学
电介质
背景(考古学)
可靠性(半导体)
缩放比例
光电子学
工程物理
集成电路
电子工程
复合材料
纳米技术
工程类
抛光
功率(物理)
物理
业务
古生物学
营销
生物
量子力学
数学
几何学
作者
Jakub Nalaskowski,S.S. Papa Rao
出处
期刊:Elsevier eBooks
[Elsevier]
日期:2021-09-17
卷期号:: 95-125
被引量:1
标识
DOI:10.1016/b978-0-12-821791-7.00021-6
摘要
The need for ultra-low-k (ULK) materials in back-end-of-line integration is presented, in the context of the overall drive for performance enhancement and size scaling in semiconductor circuits. This is followed by an overview of dielectric materials, and the steady decrease in k-value, culminating in ULK materials. The impact of chemical mechanical planarization consumables on ULK films is discussed, along with details of how such degradation is characterized. This leads to a presentation of the unique challenges of ULK films incorporated into multilayer damascene Cu interconnects, including reliability and mechanical strength considerations. The chapter concludes with an outlook on dielectric constant scaling.
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