材料科学
半导体
薄膜晶体管
晶体管
光电子学
氧化物
氧化物薄膜晶体管
薄膜
过程(计算)
纳米技术
工程物理
电气工程
计算机科学
工程类
冶金
图层(电子)
电压
操作系统
作者
Taeyong Kim,Kyungsoo Jang,Jayapal Raja,Nguyen Thi Cam Phu,Sojin Lee,Seung-Min Kang,Thanh Thuy Trinh,Youn-Jung Lee,Junsin Yi
出处
期刊:Journal of KIEEME
[The Korean Institute of Electrical and Electronic Material Engineers]
日期:2016-01-01
卷期号:29 (1): 1-5
标识
DOI:10.4313/jkem.2016.29.1.1
摘要
The ultimate aims of display market is transparent or flexible. Researches have been carried out for various applications. It has been possible to reduced the process steps and get good electrical properties for semiconductors with large optical bandgaps. Oxide semiconductors have been established as one of the leading and promising technology for next generation display panels. In this paper, alternative treatment processes have been tried for oxide semiconductors of thin film transistors to increase the electrical properties of the thin film transistors and to investigate the mechanisms. There exist a various oxide semiconductors. Here, we focused on InGaZnO, ZnO and InSnZnO which are commercialized or researched actively.
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