材料科学
化学气相沉积
微晶
单层
拉曼光谱
成核
堆积
单晶
氮化硼
带隙
结晶学
纳米技术
光电子学
光学
化学
有机化学
物理
冶金
作者
Yanxin Ji,Brian Calderon,Yimo Han,Paul Cueva,Nicholas R. Jungwirth,Hussain Alsalman,Jeonghyun Hwang,Gregory Fuchs,David A. Muller,Michael G. Spencer
出处
期刊:ACS Nano
[American Chemical Society]
日期:2017-11-22
卷期号:11 (12): 12057-12066
被引量:87
标识
DOI:10.1021/acsnano.7b04841
摘要
Two-dimensional hexagonal boron nitride (h-BN) is a wide bandgap material which has promising mechanical and optical properties. Here we report the realization of an initial nucleation density of h-BN <1 per mm2 using low-pressure chemical vapor deposition (CVD) on polycrystalline copper. This enabled wafer-scale CVD growth of single-crystal monolayer h-BN with a lateral size up to ∼300 μm, bilayer h-BN with a lateral size up to ∼60 μm, and trilayer h-BN with a lateral size up to ∼35 μm. Based on the large single-crystal monolayer h-BN domain, the sizes of the as-grown bi- and trilayer h-BN grains are 2 orders of magnitude larger than typical h-BN multilayer domains. In addition, we achieved coalesced h-BN films with an average grain size ∼100 μm. Various flake morphologies and their interlayer stacking configurations of bi- and trilayer h-BN domains were studied. Raman signatures of mono- and multilayer h-BN were investigated side by side in the same film. It was found that the Raman peak intensity can be used as a marker for the number of layers.
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