Experimental Observation of Negative Capacitance Switching Behavior in One‐Transistor Ferroelectric Versatile Memory

In this work, we investigated the negative capacitance behavior of novel ferroelectric versatile memory with low‐voltage‐driven and fast ferroelectric switching. The combined storage mechanism strengthened the stability of ferroelectric polarization by interface aligned dipoles. The simulation results of first principle calculation indicated that the monoclinic‐like orthorhombic phase of ferroelectric hafnium oxide facilitated the occurrence of S‐shaped negative capacitance behavior. Furthermore, the control of phase transition may affect ferroelectric property and negative capacitance effect during program and erase states.