电容
量子隧道
兴奋剂
物理
电气工程
场效应晶体管
拓扑(电路)
晶体管
光电子学
材料科学
量子力学
工程类
电极
电压
作者
Hyunwoo Kim,Daewoong Kwon
出处
期刊:IEEE Transactions on Nanotechnology
[Institute of Electrical and Electronics Engineers]
日期:2021-01-01
卷期号:20: 278-281
被引量:12
标识
DOI:10.1109/tnano.2021.3068572
摘要
In this work, a negative capacitance tunnel FET (NCTFET) with the tunneling current in the normal direction to the gate is proposed with channel doping engineering and its electrical characteristics are investigated using TCAD simulations with calibrated model parameters. The new NCTFET has a p + -doping (for n-type operations) in the channel overlap region, which plays a role to suppress the corner (source edge) band-to-band tunneling (BTBT) that degrades the on/off transition. By optimizing the doping concentration of the channel overlap region (N CH,OV ), the on-current gets ~3.5 times enhanced and the averaged subthreshold swing (SS AVE ) becomes reduced from 82.5 mV/dec to 43.9 mV/dec. Furthermore, the effects of epi-channel thickness (T CH ) and source overlap length (L S,OV ) variations are analyzed by simulating 2D contour BTBT generation rates and electron densities. With the optimized device parameters (4 nm T CH and 35 nm L S,OV ), the on-current is additionally ~1.6 times improved without the SS and the ambipolar current degradations.
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