堆积
退火(玻璃)
兴奋剂
材料科学
氮气
叠加断层
基面
铝
凝聚态物理
结晶学
化学物理
光电子学
复合材料
化学
物理
有机化学
作者
Chisato Taniguchi,Aiko Ichimura,Noboru Ohtani,Masakazu Katsuno,Tatsuo Fujimoto,Shinya Sato,Hiroshi Tsuge,Takayuki Yano
摘要
The formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals was theoretically investigated. A novel theoretical model based on the so-called quantum well action mechanism was proposed; the model considers several factors, which were overlooked in a previously proposed model, and provides a detailed explanation of the annealing-induced formation of double layer Shockley-type stacking faults in heavily nitrogen-doped 4H-SiC crystals. We further revised the model to consider the carrier distribution in the depletion regions adjacent to the stacking fault and successfully explained the shrinkage of stacking faults during annealing at even higher temperatures. The model also succeeded in accounting for the aluminum co-doping effect in heavily nitrogen-doped 4H-SiC crystals, in that the stacking fault formation is suppressed when aluminum acceptors are co-doped in the crystals.
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