材料科学
水溶液
电化学
跨导
晶体管
电解质
聚合物
光电子学
电介质
逆变器
离子
离子液体
电化学窗口
逻辑门
栅极电介质
化学工程
烷基
薄膜晶体管
电极
纳米技术
场效应晶体管
离子键合
电子迁移率
基质(化学分析)
频道(广播)
作者
Sang Young Jeong,Jung Woo Moon,Soonyong Lee,Ziang Wu,Sung Hyeon Park,Jeong Ho Cho,Han Young Woo
标识
DOI:10.1002/aelm.202300053
摘要
Abstract Parallel‐type organic electrochemical transistors (p‐OECTs) with aqueous electrolyte gate dielectrics have been widely studied for transducing biological signals into electrical signals. However, aqueous liquid electrolyte‐based p‐OECTs suffer from poor device stability, low transconductance ( g m ), and limited applications. In this study, a quasi‐solid‐state ion gel‐gated vertical‐type OECT (v‐OECT) and NOT logic gate are successfully demonstrated by combining both p‐type and n‐type v‐OECTs for the first time. Indacenodithiophene (IDT) polymers with alkyl (PIDTC16‐BT) and oligoethylene glycol (OEG) substituents (PIDTPEG‐BT) are studied as a channel material, and an ionic liquid in a crosslinked polymer matrix is adopted as a quasi‐solid electrolyte. Compared to aqueous devices, an enlarged electrochemical window and improved operational stability are observed. Notably, the v‐OECTs have a significantly larger channel area (50 × 50 µm 2 ) and shorter channel length (≈30 nm), yielding a dramatically increased g m . As‐spun PIDTC16‐BT films exhibit a noticeably higher g m of 72.8 mS than that of previous p‐OECTs along with superior device stability, despite a low volumetric capacitance. In the case of v‐OECTs, face‐on intermolecular packing is required to increase the carrier transport in a vertical direction. Logic gates are successfully demonstrated using p‐ and n‐type v‐OECTs, suggesting the potential of OECT‐based next‐generation electronics.
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