Low‐Energy Spin Manipulation Using Ferromagnetism

Abstract The manipulation of the electron spin direction at very low electron energies is demonstrated by exploiting the exchange field present within a magnetic thin film. The design of the lab‐on‐chip integrated magnetic tunnel transistor allows to test different magnetic materials. The variation of film thickness, exchange field strength or electron energy are shown to have an impact on the resulting spin direction of electrons crossing a ferromagnetic material. A controlled engineering of the exchange field in thin magnetic films can therefore serve as a basis of future devices enabling controlled spin manipulation.