Modification at ITO/NiOx Interface with MoS2 Enables Hole Transport for Efficient and Stable Inverted Perovskite Solar Cells

Inverted perovskite solar cells (IPSCs) utilizing nickel oxide (NiO_x) as hole transport material have made great progress, driven by improvements in materials and interface engineering. However, challenges remain due to the low intrinsic conductivity of NiO_x and inefficient hole transport. In this study, we introduced MoS₂ nanoparticles at the indium tin oxide (ITO) /NiO_x interface to enhance the ITO surface and optimize the deposition of NiO_x, resulting in increased conductivity linked to a ratio of Ni³⁺:Ni²⁺. This interface modification not only optimized energy level but also promoted hole transport and reduced defects. Consequently, IPSCs with MoS₂ modified at ITO/NiO_x interface achieved a champion power conversion efficiency (PCE) of 21.42 %, compared to 20.25 % without modification. Additionally, unencapsulated IPSCs with this interface modification displayed improved stability under thermal, light, humidity and ambient conditions. This innovative strategy for ITO/NiO_x interface modification efficiently promotes hole transportation and can be integrated with other interface engineering approaches, offering valuable insights for the development of highly efficient and stable IPSCs.