电容器
沟槽
光电子学
材料科学
电气工程
工程类
纳米技术
电压
图层(电子)
作者
Hung‐Liang Cheng,Jing‐Yuan Lin,Tian‐Chuan Hsu,Eileen Lee Ming Su,Saijun Wu,Yu‐Cheng Chang,Ta‐Chun Chien,Cheng‐Yuan Peng,Jinghai Yang,F. Tsui,Shuping Huang
标识
DOI:10.1109/3dic63395.2024.10830236
摘要
Ultra-high-density IPD capacitor is increasingly essential for high performance computing (HPC), artificial intelligence (AI) systems and mobile application compact systems in 3DFabric platform. Utilizing advanced etching and deposition techniques, Deep Trench Capacitor (DTC) features deep and narrow trenches filled with high-K dielectrics and conductive electrodes. DTC can provide significantly increased capacitance density with low equivalent series resistance (ESR) and equivalent series inductance (ESL). The miniaturization of capacitors will continue to advance Moore's law for SOC.
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