Photogating enhanced photodetectors dominated by rubrene nanodots modified SnS2 films

Abstract The hybrid-induced photogating effect is considered as an effective way for photoconductance modulating in low-dimensional photodetectors. Besides, through constructing the local photogate vertical heterostructures on two-dimensional SnS 2 surface can significantly increase its photoconductive gain. However, the potential of this photogain mechanism for SnS 2 films has not yet been revealed in practical photodetection devices. To investigate its special advantages on promoting the optical-sensing activity, the high-quality SnS 2 films with discrete, micro-area, and uniform rubrene-nanodots modification have been prepared. Benefit from the local interfacial photogating effect induced by hole trap states by rubrene-nanodots, the light-absorption and carrier-excitation efficiencies were significantly enhanced. Afterwards, the high-performance photodetector was designed based on the photogate vertical heterostructures of rubrene-nanodots/SnS 2 , which demonstrated an enhanced photoelectric response to 1064 nm light. Note that the maximum photocurrent density, photoresponsivity, and photodetectivity can reach up to 0.389 mA cm −2 , 388.71 mA W −1 , and 1.13 × 10 10 Jones, respectively. Importantly, the optimal band-structure offsets accelerated the localized hole transfer from SnS 2 film to rubrene-nanodots. The trapped holes in rubrene-nanodots induced an enhanced interface gating effect, which may help to modulate the number and lifetime of excess electrons under light illuminations. These superior features make the newly-developed photodetector be suitable for future multifunctional photodetection applications.