双层
材料科学
凝聚态物理
静水压力
扭转
半导体
联轴节(管道)
超导电性
流体静力平衡
物理
几何学
化学
光电子学
膜
复合材料
热力学
生物化学
数学
量子力学
作者
Yingying Dai,Zhineng Zhang,Puqin Zhao,Yingchun Cheng
标识
DOI:10.1088/1361-648x/ad1d86
摘要
The two-dimensional layered semiconductor MoSi2N4, which has several advantages including high strength, excellent stability, high hole mobility, and high thermal conductivity, was recently successfully synthesized using chemical vapor deposition. Based on first-principles calculations, we investigate the effects of the twist angle and interlayer distance variation on the electronic properties of twisted bilayer MoSi2N4. The flat bands are absent for twisted bilayer MoSi2N4when the twist angleθis reduced to 3.89°. Taking twisted bilayer MoSi2N4withθof 5.09° as an example, we find that flat bands emerge as the interlayer distance decreases. As the interlayer distance can be effectively modulated by hydrostatic pressure, we propose hydrostatic pressure as a knob for tailoring the flat bands in twisted bilayer MoSi2N4. Our findings provide theoretical support for extending the applications of MoSi2N4in strong correlation physics and superconductivity.
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