High‐Performance Ga2O3 In‐Memory DUV Photodetectors By Interface Charge Reservoir Design for Multifunctional Applications

Abstract The development of high‐performance detectors has played a key role in the innovation of modern optoelectronics. However, the implementation of high‐performance detectors has been a huge challenge, especially the present detectors with only optoelectronic conversion functions cannot satisfy the growing demands of the multifunction required in single devices. Here, it is demonstrated a novel in‐memory photodetector based on wide bandgap semiconductor Ga 2 O 3 by integrating memory characteristics into the detector. Originating from the dynamic control of the channel carriers by the interface charge reservoir under illumination and electrical, the device exhibits extraordinary memory characteristics and photodetection performance. The ultrahigh‐speed programming/erasing operations in the range of nanoseconds with an extinction ratio up to 10 9 is achieved. Moreover, the in‐memory photodetectors achieve near‐zero dark current, record high responsivity (6.7 × 10 7 A W −1 ), and sensitivity for UV light, making them the most sensitive UV photodetectors. Further, the potential of the device in weak‐light imaging enhancement, light information storage, and light moving path recording in the passive mode is excavated for the first time. This work enables new device capabilities and opens new opportunities for the development of high‐performance in‐memory detectors.