光探测
材料科学
光电子学
带隙
异质结
纳米材料
单层
纳米技术
直接和间接带隙
光电探测器
作者
Riya Dutta,Arindam Bala,Anamika Sen,Michael Ross Spinazze,Heekyeong Park,Woong Choi,Youngki Yoon,Sunkook Kim
标识
DOI:10.1002/adma.202303272
摘要
The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.
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