三元运算
密度泛函理论
价(化学)
氮化物
带隙
半导体
格子(音乐)
凝聚态物理
材料科学
混合功能
化学
化学物理
结晶学
计算化学
纳米技术
物理
光电子学
计算机科学
有机化学
图层(电子)
声学
程序设计语言
作者
Malhar Kute,Zihao Deng,Sieun Chae,Emmanouil Kioupakis
摘要
The II-IV-N2 class of heterovalent ternary nitrides has gained significant interest as alternatives to the III-nitrides for electronic and optoelectronic applications. In this study, we apply first-principles calculations based on density functional theory to systematically investigate the effects of structural distortions due to cation size mismatch on the configurational disorder of the cation sublattice and the valence band structure in this class of materials. We find that larger size mismatch between the group-II and the group-IV cations results in stronger lattice distortions from the ideal hexagonal ratio, which in turn inhibits the propensity of these materials toward octet-rule violating cation disorder. We also demonstrate that the formation energy of a single cation antisite pair, which is fast and simple to calculate, is a strong indicator of a material's propensity toward disorder. Furthermore, the breaking of in-plane symmetry leads to a splitting of the top three valence bands at Γ, which is also directly related to the magnitude of structural distortions. Our work demonstrates that the structural and functional properties of the II-IV-N2 materials can be finely tuned through controllable structural distortions that stem from the choice of cations.
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