响应度
材料科学
紫外线
半最大全宽
拉曼光谱
化学气相沉积
蓝宝石
光电探测器
氮化硼
光电子学
X射线光电子能谱
暗电流
衍射
分析化学(期刊)
光学
纳米技术
化学
激光器
核磁共振
物理
色谱法
作者
Yuqiang Li,Zhuogeng Lin,Wei Zheng,Feng Huang
标识
DOI:10.1021/acsaelm.1c00263
摘要
Hexagonal boron nitride crystalline film with a thickness of 70 μm is deposited on a c-plane sapphire at 1700 °C by the chemical vapor deposition (CVD) method. In X-ray diffraction (XRD) characterizations, a peak of (002) is observed at 26.01° with the full width at half-maximum (FWHM) of 1.17°, and the c-axis lattice constant is estimated to be 6.84 Å. The characterization results of Raman and X-ray photoelectron spectroscopy further confirm the film's high quality. Based on the h-BN film, a vacuum ultraviolet (VUV) photodetector is further fabricated with a responsivity of 48.7 μA/W, exhibiting a photo-to-dark current ratio (PDCR) of more than 103 as well as an excellent spectral selectivity to short-wave ultraviolet irradiation. By analyzing the photoresponse process, the influence of different response mechanisms is explained, implying the photodetector's ability to respond quickly.
科研通智能强力驱动
Strongly Powered by AbleSci AI