材料科学
钙钛矿(结构)
异质结
能量转换效率
光电子学
薄膜
图层(电子)
卤化物
带隙
碘化物
钙钛矿太阳能电池
化学工程
纳米技术
无机化学
工程类
化学
作者
Qingquan He,Michael Worku,Liang‐Jin Xu,Chenkun Zhou,Haoran Lin,Alex J. Robb,Kenneth Hanson,Yan Xin,Biwu Ma
标识
DOI:10.1021/acsami.9b17851
摘要
The interfaces between perovskite and charge transport layers greatly impact the device efficiency and stability of perovskite solar cells (PSCs). Inserting an ultrathin wide-band-gap layer between perovskite and hole transport layers (HTLs) has recently been shown as an effective strategy to enhance device performance. Herein, a small amount of an organic halide salt, N,N'-dimethylethylene-1,2-diammonium iodide, is used to create two-dimensional (2D)-three-dimensional (3D) heterojunctions on MAPbI3 thin film surfaces by facile solution processing. The formation of an ultrathin wide-band-gap 2D perovskite layer on top of 3D MAPbI3 changes the morphological and photophysical properties of perovskite thin films, effectively reduces the surface defects, and suppresses the charge recombination in the interfaces between perovskite and HTL. As a result, a power conversion efficiency of ∼20.2%, with an open-circuit voltage of 1.14 V, a short-circuit current density of 22.57 mA cm-2, and a fill factor of 0.78, is achieved for PSCs with enhanced stability.
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