锗
塞贝克系数
热电效应
材料科学
堆积
热电材料
晶体结构
锑
电阻率和电导率
单晶
碲化物
结晶学
范德瓦尔斯力
热导率
粉末衍射
凝聚态物理
化学
冶金
热力学
硅
物理
工程类
复合材料
有机化学
电气工程
分子
作者
Markus Nentwig,Felix Fahrnbauer,Marcus Kasprick,Oliver Oeckler
标识
DOI:10.1016/j.jallcom.2016.10.104
摘要
Single-crystal X-ray diffraction revealed that the structure of As2Ge7Te10 = (GeTe)7As2Te3 (space group R 3¯m) consists of rocksalt-type building blocks separated by van der Waals gaps. As and Ge are disordered on some of the cation sites. The rhombohedral 57R stacking sequence results in an extraordinarily large lattice parameter of c = 103.41 (2) Å. When such structures are formed, the extremely long diffusion pathways required to obtain completely ordered compounds often lead to samples that contain intergrown rocksalt-type slabs with varying thicknesses. As a result, the system (GeTe)nAs2Te3 is prone to form both disordered and inhomogeneous samples, expecially for n > 9. Yet, powder diffraction data reveal that such samples contain 57R-As2Ge7Te10 as a main component. Such inhomogeneous materials exhibit promising thermoelectric properties: the Seebeck coefficient as well as the lattice part of the thermal conductivity are in the same range as germanium antimony tellurides with high figures of merit ZT. However, the high electrical conductivity and consequently the rather dominant electronic component of thermal transport still impede such ZT values for germanium arsenic tellurides.
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