三维集成电路
通过硅通孔
炸薯条
集成电路设计
电子工程
材料科学
工程类
硅
计算机科学
电气工程
光电子学
作者
Sandeep Kumar Samal,Deepak Kumar Nayak,Motoi Ichihashi,Srinivasa Banna,Sung Kyu Lim
标识
DOI:10.1109/s3s.2016.7804405
摘要
In this paper, we conduct a comprehensive design comparison of 2D ICs, monolithic 3D ICs and TSV-based 3D ICs using a silicon-validated 14nm FinFET foundry technology and commercial quality designs. Through full-chip layouts and sign-off analysis using commercial-grade tools, the potential of monolithic 3D IC is explored and validated in terms of power, performance and area against that of TSV-based 3D ICs and 2D ICs.
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