材料科学
钙钛矿(结构)
降级(电信)
自行车
温度循环
重置(财务)
电阻式触摸屏
电阻随机存取存储器
计算机科学
化学
物理
电压
电气工程
热力学
结晶学
电信
考古
计算机视觉
热的
经济
历史
工程类
金融经济学
作者
Yumei Ren,Hanlu Ma,Wei Wang,Zhongqiang Wang,Xiaoning Zhao,Weizhen Liu,Jiangang Ma,Yichun Liu
标识
DOI:10.1002/admt.201800238
摘要
Abstract As one key issue of resistive switching (RS) memory, the cycling endurance is poorly understood in hybrid perovskite‐based memory devices. Here, the cycling failure and the corresponding cycling‐induced degradation of CH 3 NH 3 PbI 3 ‐based resistive random access memory devices are discussed. The high resistance state clearly decreases with the number of operation cycles, finally triggering irreversible failure in the collapse of switching window. By monitoring the I – V curves for all cycles, a negative set event is observed to be the critical turning point that considerably accelerates the cycling degradation rate. The decrease of | V set | and | V reset | indicates a reduction of the migration barrier of iodine vacancies ( V I ), which accounts for the appearance of a negative set after cycling. The understanding of RS cycling degradation can promote the optimization of device endurance by slowing the defect accumulation rate.
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