Silicide Based Low Temperature and Low Pressure Bonding of TI/SI for Microfludic and Hermetic Selaling Application

In this work, we have shown and validated bonding of titanium (Ti) coated glass with (100) silicon wafer at lower thermocompression cycle of 377 °C temperature and a nominal contact pressure of 0.15 MPa. Excellent bond strength > 100 MPa and void free interface have been observed using scanning acoustic tomography (SAT), which clearly suggest that optimized temperature-pressure together can provide a superior quality bonding. Furthermore, post-bond dicing was performed in order to validate further the bonding strength which was confirmed by successfully dicing the Glass-Silicon pair without any damage to the bonding interface. This noble, low cost and low temperature simple bonding approach must be useful in hermetic sealing of microfluidic channels for on-chip compatible applications.