发光
兴奋剂
稀土
材料科学
纳米线
等离子体
光致发光
纳米技术
光电子学
化学工程
冶金
物理
工程类
量子力学
作者
Li Yang,Jiaqi Wang,Yiyi Zhang,Mei Chen,Xuejiao Wang,Chuang Wang,Qiushi Wang,Cailong Liu
标识
DOI:10.1016/j.jallcom.2022.165458
摘要
Si 3 N 4 nanowires doped with rare earth ions (such as Ce 3+ , Tb 3+ , Eu 2+ and Eu 3+ ) were synthesized by plasma assisted direct nitridation method using Si, rare earth oxides and N 2 as raw materials. The prepared doped Si 3 N 4 nanowires were characterized by XRD, EDS, XPS, SEM and TEM. The obtained single-crystal doped Si 3 N 4 nanowires have uniform diameters of about 50–100 nm and lengths of more than 10 µm. The photoluminescence (PL), PL decay curves as well as thermal quenching behaviors of doped Si 3 N 3 nanowires were systematically investigated. This work provides an effective strategy for doping large-size functional atoms in Si 3 N 4 nanowires. • Rare earth doped Si 3 N 4 nanowires were synthesized by a direct nitridation method. • Rare earth doped Si 3 N 4 nanowires have excellent luminescence properties. • The luminescence peaks of doped Si 3 N 4 nanowires are related to the doping type.
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