材料科学
退火(玻璃)
异质结
响应度
半导体
光电子学
光探测
原位
超短脉冲
硅
图像传感器
光电探测器
光学
化学
物理
有机化学
复合材料
激光器
作者
Yu Chang,Yiqing Zhou,J.Y. Wang,Wei Zhai
出处
期刊:Small
[Wiley]
日期:2022-05-22
卷期号:18 (25)
被引量:1
标识
DOI:10.1002/smll.202201714
摘要
The quality of the interface, e.g., the semiconductor-semiconductor or metal-semiconductor interface, is the main factor restricting the photodetection performance of a heterojunction. In this study, a high-quality Se/Si interface is constructed via in situ directional transformation of amorphous Se (a-Se) into crystalline Se (t-Se) on a Si substrate via light annealing. Benefitting from the high-quality interface and appropriate energy band between Si and Se, the t-Se/Si heterojunction exhibits an extremely high responsivity and detectivity of 583.33 mA W-1 and 8.52 × 1012 Jones at 760 nm, respectively. In addition, the device exhibits an ultrafast rise time of 183 µs and a decay time of 405 µs. Furthermore, an image sensor fabricated via local light annealing successfully recognizes patterns of "N," "P," and "U." This study provides valuable guidance for the construction of high-quality interfaces and the design of self-powered image sensors.
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