铍
材料科学
离子注入
退火(玻璃)
带隙
电阻率和电导率
宽禁带半导体
氮化物
硼
半导体
光电子学
分析化学(期刊)
离子
纳米技术
冶金
化学
有机化学
图层(电子)
色谱法
电气工程
工程类
作者
Bang-Quan He,Wenjun Zhang,Zhiqiang Yao,Y.M. Chong,Yoon Mee Yang,Qing Ye,Xiaohui Pan,Juan Antonio Zapien,I. Bello,S. T. Lee,I. Gerhards,Hayo Zutz,H. Hofsäß
摘要
p -type conduction in hexagonal boron nitride (hBN) films was achieved by beryllium implantation and subsequent rapid thermal annealing treatment. The dependence of phase composition and electrical properties of hBN films on the implantation fluence and annealing was studied. A maximum resistivity reduction by six orders of magnitude was demonstrated. Hall measurements revealed a corresponding hole concentration of 3×1019 cm−3 and mobility of 27 cm2/V s. The activation energy of Be ions was estimated to be 0.21 eV. It is suggested that hBN is a promising wide bandgap semiconductor for applications in high-temperature electronic devices and transparent conductive coatings.
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