电子束光刻
模版印刷
平版印刷术
材料科学
下一代光刻
阴极射线
极紫外光刻
X射线光刻
电子
纳米技术
光电子学
光学
抵抗
物理
核物理学
图层(电子)
作者
T. H. P. Chang,M. Mankos,Kim Y. Lee,L. P. Muray
标识
DOI:10.1016/s0167-9317(01)00528-7
摘要
A number of multiple electron-beam approaches are currently under evaluation for sub-100-nm lithography. These approaches offer the potential of improving throughput for direct wafer writing and mask patterning and could have far reaching implications for the semiconductor industry. A brief review of important examples of these approaches are given with a discussion on throughput. The current status of two specific approaches, the microcolumn and the single column with a multiple electron-beam source (photocathode), are reported. In particular, a more detailed review of the recent advances in the microcolumn technology is presented.
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