Graphite thin film formation by chemical vapor deposition
作者
Masako Yudasaka,Ryosuke Kikuchi,Taisuke Matsui,Hiroaki Kamo,Y. Ohki,S. Yoshimura,Etsuro OTA
出处
期刊:Applied Physics Letters [American Institute of Physics] 日期:1994-02-14卷期号:64 (7): 842-844被引量:49
标识
DOI:10.1063/1.110998
摘要
Well-ordered graphite thin films were obtained by chemical vapor deposition of 2-methyl- 1,2′-naphthyl ketone on Ni substrates at substrate temperatures higher than 600 °C. Values of interlayer spacing calculated from x-ray diffraction data were between 3.360 and 3.350 Å. Raman scattering spectra of the films showed a peak centering at 1580 cm−1.