GSM演进的增强数据速率
半径
材料科学
硅
机械加工
有限元法
流体静力平衡
侧面
推力
刀具磨损
前角
复合材料
静水应力
冶金
机械工程
结构工程
工程类
计算机科学
物理
社会学
电信
量子力学
计算机安全
人类学
作者
Jiwang Yan,Hongwei Zhao,Tsunemoto Kuriyagawa
标识
DOI:10.1088/0268-1242/24/7/075018
摘要
The submicron-level orthogonal cutting process of silicon has been investigated by the finite element approach, and the effects of tool edge radius on cutting force, cutting stress, temperature and chip formation were investigated. The results indicate that increasing the tool edge radius causes a significant increase in thrust force and a decrease in chip thickness. A hydrostatic pressure (∼15 GPa) is generated in the cutting region, which is sufficiently high to cause phase transformations in silicon. The volume of the material under high pressure increases with the edge radius. Temperature rise occurs intensively near the tool–chip interface while the highest cutting temperature (∼300 °C) is far lower than the necessary temperature for activating dislocations in silicon. As the edge radius is beyond a critical value (∼200 nm), the primary high-temperature zone shifts from the rake face side to the flank face side, causing a transition in the tool wear pattern from crater wear to flank wear. The simulation results from the present study could successfully explain existing experimental phenomena, and are helpful for optimizing tool geometry design in silicon machining.
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