FTO films deposited in transition and oxide modes by magnetron sputtering using tin metal target

Fluorine-doped tin oxide (FTO) films were prepared by pulsed DC magnetron sputtering with a metal Sn target. Two different modes were applied to deposit the FTO films, and their respective optical and electrical properties were evaluated. In the transition mode, the minimum resistivity of the FTO film was 1.63×10(-3) Ω cm with average transmittance of 80.0% in the visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H2 could achieve even lower resistivity to 8.42×10(-4) Ω cm and higher average transmittance up to 81.1% in the visible region.