磷化物
钝化
硫化物
X射线光电子能谱
磷化镓
磷化铟
同步辐射
热稳定性
材料科学
带隙
化学
无机化学
结晶学
分析化学(期刊)
图层(电子)
纳米技术
光学
光电子学
化学工程
冶金
金属
砷化镓
物理
有机化学
工程类
色谱法
作者
Zhu-Shu Yuan,Xinyi Ding,B Lai,Xiaoyuan Hou,Lu E,Ping Xu,X. Y. Zhang
摘要
Synchrotron radiation photoelectron spectroscopy has been used to investigate III–V phosphide GaP and InP (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick sulfide layer with P–S bond and strong Ga–S (In–S) bond of high thermal stability is formed on the neutralized (NH4)2S-treated GaP (InP) (100) surfaces. The possible passivation mechanisms of the two (NH4)2S solutions to III–V phosphide surfaces are also discussed.
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