Schottky diodes with high breakdown voltages

The methods of increasing the breakdown voltages in silicon Schottky diodes is presented. In addition to a guarding ring, screen-diffusion regions were introduced. In this manner, the electrical field near the Schottky contact was lowered and, as a result, higher breakdown voltages were obtained. By using this method, the breakdown voltage can be increased by a factor of 3–5. However, a large device area is required for the same Schottky contact area and, therefore, the junction parasitic capacitance is greater.