CHEMICAL MECHANICAL POLISHING AND ITS MECHANISM ON YTTERBIUM-DOPED MIXED SESQUIOXIDES (Yb:LuScO3)

In this paper, Yb:LuScO 3 crystal was processed by chemical mechanical polishing (CMP), and the surface roughness of 0.18[Formula: see text]nm was obtained. The atomic step structures of these sesquioxide crystals are successfully characterized by AFM scanning probe technology. Through several CMP experiments, the basic material removal mechanism of a ytterbium-doped LuScO 3 crystal during CMP is studied. Based on the findings, a material removal model is established. The results of this study provide ideas for the study of CMP, crystal growth and epitaxy.