邻接
材料科学
晶格常数
外延
凝聚态物理
结晶学
格子(音乐)
倾斜(摄像机)
衍射
薄膜
各向异性
应力松弛
放松(心理学)
光学
化学
纳米技术
几何学
复合材料
物理
有机化学
数学
蠕动
图层(电子)
声学
心理学
社会心理学
作者
Tae Heon Kim,Seung‐Hyub Baek,S. Y. Jang,Sang Mo Yang,Seo Hyoung Chang,Tae Kwon Song,J.-G. Yoon,Chang‐Beom Eom,J.-S. Chung,Tae Won Noh
摘要
Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the x-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted in the vertical lattice mismatch between adjacent BiFeO3 layers, which induced the strain relaxation and crystallographic tilt. The step bunching was confirmed by the increased terrace width on the BiFeO3 surface.
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