材料科学
跨导
信道长度调制
排水诱导屏障降低
场效应晶体管
电介质
光电子学
晶体管
阈值电压
饱和速度
栅极电介质
锗
栅氧化层
饱和(图论)
半导体
氧化物
电压
电气工程
硅
冶金
工程类
数学
组合数学
作者
Bai Yu-Rong,Xu Jing-Ping,Lu Liu,Fan Min-Min,Huang Yong,Cheng Zhi-Xiang
出处
期刊:Chinese Physics
[Science Press]
日期:2014-01-01
卷期号:63 (23): 237304-237304
标识
DOI:10.7498/aps.63.237304
摘要
An analytical model for drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator (GeOI) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is established by solving two-dimensional Poisson's equation to derive the surface potential and inversion charge in the channel region. This drain current model includes velocity-saturation, channel-length modulation and mobility-modulation effects; and it simultaneously considers the impacts of the interface-trapped charges at both gate oxide/channel and buried oxide/channel interfaces and the fixed oxide charges on the drain current. A good agreement between the simulated drain current and experimental data is achieved in both the saturation and non-saturation regions, confirming the validity of the model. Using the model, the influences of the main structural and physical parameters on transconductance, output conductance, cut-off frequency, and voltage gain of the device are investigated. These can be served as a guide for the design of the GeOI PMOSFET.
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