Enhanced average power factor and ZT value in PbSe thermoelectric material with dual interstitial doping

High PF ave of 24.18 μW cm −1 K −2 and ZT ave of 1.01 at 300–773 K have been achieved in n-type Pb 1.02 Se–0.2%Cu thermoelectric through dual Pb and Cu interstitial doping, and it exceeds other Se/S-based (Te free) n-type thermoelectric materials.