量子点
墨水池
配体(生物化学)
太阳能电池
化学工程
纳米技术
光电子学
材料科学
化学
复合材料
受体
工程类
生物化学
作者
Napasuda Wichaiyo,Yuyao Wei,Chao Ding,Guozheng Shi,Witoon Yindeesuk,Liang Wang,Hua̅n Bì,Jiaqi Liu,Shuzi Hayase,Yusheng Li,Yongge Yang,Qing Shen
标识
DOI:10.1088/1674-4926/25030003
摘要
Abstract Traditional p-type colloidal quantum dot (CQD) hole transport layers (HTLs) used in CQD solar cells (CQDSCs) are commonly based on organic ligands exchange and the layer-by-layer (LbL) technique. Nonetheless, the ligand detachment and complex fabrication process introduce surface defects, compromising device stability and efficiency. In this work, we propose a solution-phase ligand exchange (SPLE) method utilizing inorganic ligands to develop stable p-type lead sulfide (PbS) CQD inks for the first time. Various amounts of tin (II) iodide (SnI 2 ) were mixed with lead halide (PbX 2 ; X = I, Br) in the ligand solution. By precisely controlling the SnI₂ concentration, we regulate the transition of PbS QDs from n-type to p-type. PbS CQDSCs were fabricated using two different HTL approaches: one with 1,2-ethanedithiol (EDT)-passivated QDs via the LbL method (control) and another with inorganic ligand-passivated QD ink (target). The target devices achieved a higher power conversion efficiency (PCE) of 10.93%, compared to 9.83% for the control devices. This improvement is attributed to reduced interfacial defects and enhanced carrier mobility. The proposed technique offers an efficient pathway for producing stable p-type PbS CQD inks using inorganic ligands, paving the way for high-performance and flexible CQD-based optoelectronic devices.
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