Band structures of curved quantum well calculated by k·p method

In this paper, the band structures of curved InGaAs/InP Quantum Well (QW) are investigated using the 8-band k·p method. The theoretical model adopts both the Luttinger-Kohn Hamiltonian considering spin-orbit interaction and 2- degenerated band, and the Pikus-Bir Hamiltonian for strained semiconductor. The Schrödinger equation is solved by Finite-Difference Method (FDM). It is found that band edges are inclined caused by the linearly distributed strain along z- direction of the curved QW, and the tilt direction is opposite under tension and compression. Within the material fracture limit, this strain field which is similar to the application of external electric field, can induce a variation in the band gap.