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Synthesis of Single-Atom and Dual-Atom Catalyst Using N-Defective C3N4

催化作用 电化学 金属 结晶学 Atom(片上系统) 材料科学 X射线吸收精细结构 化学 物理化学 电极 光谱学 物理 冶金 有机化学 量子力学 计算机科学 嵌入式系统
作者
Sang yong Shin,Hyunjoo Lee
出处
期刊:Meeting abstracts 卷期号:MA2022-02 (54): 2021-2021 被引量:1
标识
DOI:10.1149/ma2022-02542021mtgabs
摘要

Single-atom catalysts, which have been studied tremendously in the past decade, are emerging as a new class of heterogeneous catalysts. It is now generally known that defect sites play an important role in forming single-atomic structures. In the case of SACs, defective sites provide not only space for fixation of metal precursor, but also electrons for stabilizing positive metal ions. Graphitic carbon nitride (g-C 3 N 4 ) is one of the ideal 2D materials for the synthesis of SACs. C 3 N 4 has enough anchoring sites which originate from the ordered structure of tri-s-triazines connected together. Furthermore, abundant nitrogen atoms in C 3 N 4 can provide electrons to single metal atoms. however, C 3 N 4 is unsuitable as support for electrochemical catalysts due to its low electrical conductivity. Therefore, we made a C 3 N 4 shell on the outer surface of carbon black (Ketjen Black EC-600JD) to obtain conductive support (C@C 3 N 4 ).[1] Pt was supported on C@C 3 N 4 at 1, 2, 4, and 8 wt% by wetness impregnation method. Through XRD, HAADF-STEM, and XAFS analysis, it was confirmed that a single-atomic structure was formed only when the Pt content was 1 or 2 wt%. In addition, I confirmed that the H 2 O 2 selectivity (%) in the electrochemical oxygen reduction reaction was different according to the Pt content of the catalysts. In terms of controlling reaction sites at the atomic level, the challenge above creating single-atomic structures is creating structures in which two or three atoms are formed as dimer or trimer. Unlike single-atom catalysts, in a dimer or trimer structure, two or more atoms are adjacent to each other, so they can exhibit completely different catalytic properties. Finely controlling the defect site of the support can be a good strategy. Therefore, I adopted the strategy of making a defect in C 3 N 4 to synthesize a dimer structure. It has been reported that N-vacancy can be selectively formed on C 3 N 4 by additional heat treatment with NaBH 4 .[2, 3] In addition, DFT calculation results have been reported that Pd-Cu dimer structure can be stably formed on nitrogen-defective C 3 N 4 .[4] In this work, I create N-vacancy on a Pt 1 /C@C 3 N 4 by additional heat treatment with NaBH 4 , and Co atoms were deposited as a secondary transition metal. The research strategy was to anchor the Co atom to the N-vacancy formed around the Pt single-atom, resulting in the formation of a dimer structure. First of all, the formation of N-vacancy on C@C 3 N 4 support was clearly confirmed by FT-IR and XPS analysis. To confirm the dimer structure of Pt and Co, XAFS analysis was conducted. As a result, although not all Pt and Co atoms formed a dimer structure due to the limitation of the synthesis method, the intended structure of Co atom connected to a Pt atom was confirmed. In the Pt L 3 edge EXAFS, a peak arising from Pt-Co scattering was observed at 2.4 Å. Furthermore, to confirm that PtCo alloy particles were not formed, high-result HAADF-STEM images were taken. All metal atoms were atomically dispersed, and nanoparticles were not found. This research demonstrated that defect engineering on support material can successfully modify active site on the atomic scale. References [1] Lee, I. H.; Cho, J.; Chae, K. H.; Cho, M. K.; Jung, J.; Cho, J.; Lee, H. J.; Ham, H. C.; Kim, J. Y., Appl. Catal. B, 2018, 237 , 318-326. [2] Wen, Y.; Qu, D.; An, L.; Gao, X.; Jiang, W.; Wu, D.; Yang, D.; Sun, Z., ACS Sustain. Chem. Eng. 2019, 7 (2), 2343-2349. [3] Yu, H.; Shi, R.; Zhao, Y.; Bian, T.; Zhao, Y.; Zhou, C.; Waterhouse, G. I. N.; Wu, L.-Z.; Tung, C.-H.; Zhang, T., Adv. Mater. 2017, 29 (16), 1605148. [4] Cao, Y.; Zhao, C.; Fang, Q.; Zhong, X.; Zhuang, G.; Deng, S.; Wei, Z.; Yao, Z.; Wang, J., J. Mater. Chem. A, 2020, 8 (5), 2672-2683.

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