钙钛矿(结构)
材料科学
载流子寿命
光电子学
卤化物
微晶
纳米技术
化学工程
硅
无机化学
工程类
化学
冶金
作者
Jiahao Guo,Bingzhe Wang,Da-Yong Lu,Ting Wang,Liu T,Rui Wang,Xiyue Dong,Tong Zhou,Nan Zheng,Qiang Fu,Zengqi Xie,Xiangjian Wan,Guichuan Xing,Yongsheng Chen,Yongsheng Liu
标识
DOI:10.1002/adma.202212126
摘要
Abstract The carrier lifetime is one of the key parameters for perovskite solar cells (PSCs). However, it is still a great challenge to achieve long carrier lifetimes in perovskite films that are comparable with perovskite crystals owning to the large trap density resulting from the unavoidable defects in grain boundaries and surfaces. Here, by regulating the electronic structure with the developed 2‐thiopheneformamidinium bromide (ThFABr) combined with the unique film structure of 2D perovskite layer caped 2D/3D polycrystalline perovskite film, an ultralong carrier lifetime exceeding 20 µs and carrier diffusion lengths longer than 6.5 µm are achieved. These excellent properties enable the ThFA‐based devices to yield a champion efficiency of 24.69% with a minimum V OC loss of 0.33 V. The unencapsulated device retains ≈95% of its initial efficiency after 1180 h by max power point (MPP) tracking under continuous light illumination. This work provides important implications for structured 2D/(2D/3D) perovskite films combined with unique FA‐based spacers to achieve ultralong carrier lifetime for high‐performance PSCs and other optoelectronic applications.
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