A New Laminated Structure of MIM Capacitor with Low Capacitance Density Based on Semiconductor standard advanced process

MIM capacitors are widely used in electronic circuit systems and integrated circuits because of their good quality factor, low parasitic capacitance, high capacitance accuracy, and low leakage. In this paper, a new laminated structure of MIM capacitor is designed by adding silicon oxide above and below the dielectric layer of traditional structure based on Semiconductor standard advanced process. Under the same size and area, the breakdown voltage is improved by 19%, the leakage current is reduced by 10%, and the reliability lifetime is increased by 409 times, which has a great application prospect.