High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

The GaSb-based laser shows its superiority in the 3–4 μm wavelength range. However, for a quantum well (QW) laser structure of InGaAsSb/AlGaInAsSb multiple-quantum well (MQW) grown on GaSb, uniform content and high compressive strain in InGaAsSb/AlGaInAsSb are not easy to control. In this paper, the influences of the growth temperature and compressive strain on the photoluminescence (PL) property of a 3.0-μm InGaAsSb/AlGaInAsSb MQW sample are analyzed to optimize the growth parameters. Comparisons among the PL spectra of the samples indicate that the In0.485GaAs0.184Sb/Al0.3Ga0.45In0.25As0.22Sb0.78 MQW with 1.72% compressive strain grown at 460 °C posseses the optimum optical property. Moreover, the wavelength range of the MQW structure is extended to 3.83 μm by optimizing the parameters.